to-252-2l plastic-encapsulate mosfets CJU10N10 n-channel power mosfet general description the CJU10N10 provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. feature z excellent package for good heat dissipation z ultra low gate charge z low reverse transfer capacitance z fast switching capability z avalanche energy specified application z power switching application maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 100 gate-source voltage v gs 20 v continuous drain current i d 9.6 pulsed drain current i dm 38.4 a single pulsed avalanche energy (note1) e as 150 mj thermal resistance from junction to ambient r ja 100 /w junction temperature t j 150 storage temperature range t stg -55 ~+150 maximum lead temperature for soldering purposes , 1/8?from case for 5 seconds t l 260 to-252-2l 1. gate 2. drain 3. source 1 of 2 sales@zpsemi.com www.zpsemi.com CJU10N10 a,feb,2014
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 100 v zero gate voltage drain current i dss v ds =100v, v gs =0v 1 a gate-body leakage current i gss v ds =0v, v gs = 20v 100 na on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 1. 2 2.5 v static drain-source on-resistance r ds(on) v gs =10v, i d =5a 0.14 ? forward transconductance g fs v ds =25v, i d =6a 3.5 . s dynamic characteristics (note 3) input capacitance c iss 690 output capacitance c oss 120 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 90 pf switching characteristics (note 3) turn-on delay time t d (on) 11 turn-on rise time t r 7.4 turn-off delay time t d(off) 35 turn-off fall time t f v dd =30v, r g =2.5 ? , i d =2a, v gs =10v 9.1 ns total gate charge q g 15.5 nc gate-source charge q gs 3.2 nc gate-drain charge q gd v ds =30v,v gs =10v,i d =3a 4.7 nc drain-source diode characteristics drain-source diode forward voltage (note2) v sd v gs = 0v, i s =9a 1.2 v continuous drain-source diode forward current i s 9.6 a pulsed drain-source diode forward current i sm 38.4 a notes : 1. i l =10a, v dd =50v, r g =25 ? ,starting t j =25 . 2. pulse test : pulse width 300s, duty cycle 2%. 3. guaranteed by design, not subject to production 2 of 2 sales@zpsemi.com www.zpsemi.com CJU10N10 a,feb,2014
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